Deep Reactive Ion Etching
Deep Reactive Ion Etching (DRIE or ASE; patented by Robert Bosch
GmbH) is a silicon etching process enabling the manufacturing of
structures with high aspect ratios. The process is based on an
alternating ion etching and sidewall passivation of structures.
Protron's engineers have many years experience in development and
manufacturing of MEMS with DRIE. The process is the most versatile
silicon bulk micromachining process in microsystem technologies. It
allows the realization of 3-dimensional structures with a high
degree of design freedom. Protron uses the process for the
realization of devices in almost every field of MEMS applications,
such as microfluidics, microoptics, sensors, and actuators.
Specifications
- aspect ratios up to 30:1
- sidewall angle: 90°±2°
- minimum structure width: ca. 1µm
- maximum depth: through wafer etch possible
- etch rate: up to 10 µm/min
Protron offers
- prototyping
- production - from small to high volume